Epitaxial orientation of PtSi grown by Pt deposition on heated Si(001) substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357631
Reference6 articles.
1. A standard-television compatible 648*487 pixel Schottky-barrier infrared CCD image sensor
2. Crystallography of PtSi films on (001) silicon
3. Lattice match: An application to heteroepitaxy
4. Transition‐metal silicides lattice‐matched to silicon
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3. Effect of Pt film thickness on PtSi formation and film surface morphology;Surface and Coatings Technology;2005-08
4. Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors;Thin Solid Films;2004-11
5. Experimental and theoretical electronic structure determination for PtSi;Physical Review B;2003-07-30
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