Analytical surface-potential compact model for amorphous-IGZO thin-film transistors-Reference-Cited by-同舟云学术

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Analytical surface-potential compact model for amorphous-IGZO thin-film transistors

Published:2015-06-07 Issue:21 Volume:117 Page:215705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zong Zhiwei¹,Li Ling¹,Jang Jin²,Lu Nianduan¹^ORCID,Liu Ming¹

Affiliation:

1. Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701, South Korea

Funder

Chinese Academy of Sciences (CAS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922181

Reference22 articles.

1. Universal compact model for long- and short-channel Thin-Film Transistors

2. Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors Part I: Long-Channel Devices

3. Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

4. Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

5. Transparent, High-Performance Thin-Film Transistors with an InGaZnO/Aligned-SnO2-Nanowire Composite and their Application in Photodetectors

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1. An All-Region BSIM Thin-Film Transistor Model for Display and BEOL 3-D Integration Applications;IEEE Transactions on Electron Devices;2024-08

2. Accurate and Compact Small-Signal Modeling of Zinc-Oxide Thin-Film Transistors for Operation in the GHz Regime;2024 Device Research Conference (DRC);2024-06-24

3. Optimization of Electrical Performance of aingaZnO Thin-Film Transistors by Interfacial Modification and Passivation;2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2023-10-27

4. A Universal Core Surface-Potential Modeling Methodology for Future Heterogeneous AOS/Si Co-integrated Design;2022 10th International Symposium on Next-Generation Electronics (ISNE);2023-05-12

5. Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination;Micromachines;2023-04-13

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