Magneto-ionic and electrostatic gating of magnetism: Phenomena and devices

Author:

Herrera Diez L.1ORCID,Chiba D.23ORCID,Gilbert D. A.4ORCID,Granville S.5ORCID,Leistner K.6ORCID

Affiliation:

1. Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay 1 , 91120 Palaiseau, France

2. Institute of Scientific and Industrial Research (SANKEN), Osaka University 2 , Ibaraki, Osaka 567-0047, Japan

3. International Center for Synchrotron Radiation Innovation Smart, Tohoku University 3 , Sendai, Miyagi 980-8577, Japan

4. Materials Science and Engineering Department, University of Tennessee 4 , Knoxville, Tennessee 37996, USA

5. The MacDiarmid Institute for Advanced Materials and Nanotechnology, Robinson Research Institute, Victoria University of Wellington 5 , P.O. Box 33–436, Lower Hutt 5046, New Zealand

6. Faculty of Natural Sciences, Institute of Chemistry, Electrochemical Sensing and Energy Storage, Chemnitz University of Technology 6 , Chemnitz, Germany

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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