Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate-Reference-Cited by-同舟云学术

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Published:2016-08-08 Issue:6 Volume:109 Page:061111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Aleshkin V. Ya.¹²,Baidus N. V.³,Dubinov A. A.¹²,Fefelov A. G.⁴,Krasilnik Z. F.¹²,Kudryavtsev K. E.¹²,Nekorkin S. M.¹³,Novikov A. V.¹²^ORCID,Pavlov D. A.²^ORCID,Samartsev I. V.³^ORCID,Skorokhodov E. V.¹,Shaleev M. V.¹,Sushkov A. A.²^ORCID,Yablonskiy A. N.¹,Yunin P. A.¹,Yurasov D. V.¹²

Affiliation:

1. Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia

2. Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia

3. Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia

4. FGUE “Salut,” 603950 Nizhny Novgorod, Russia

Funder

Russian Science Foundation (RSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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