Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3557026
Reference23 articles.
1. k→·p→perturbation theory in III-V compounds and alloys: a reexamination
2. Spin splitting in narrow InAs quantum wells with In0.75Ga0.25As barrier layers
3. Large Rashba Splitting in InAs Quantum Wells due to Electron Wave Function Penetration into the Barrier Layers
4. Extraordinary magnetoresistance effect in a microstructured metal–semiconductor hybrid structure
5. Magnetoresistance of semiconductor-metal hybrid structures: The effects of material parameters and contact resistance
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies;Journal of Applied Physics;2017-02-07
2. Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures;Applied Physics Letters;2014-03-10
3. Strong Rashba Spin–Orbit Interaction Intensity in Low-Potential-Barrier Quantum Dots;Japanese Journal of Applied Physics;2013-04-01
4. N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy;Journal of Applied Physics;2013-01-21
5. GATE-CONTROLLED RASHBA SPIN–ORBIT INTERACTION INTENSITY IN SEMICONDUCTOR HETEROSTRUCTURES;International Journal of Modern Physics B;2012-10-07
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