Manipulation of polarization anisotropy in bare InAs and InAs/GaSb core-shell nanowires-Reference-Cited by-同舟云学术

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Manipulation of polarization anisotropy in bare InAs and InAs/GaSb core-shell nanowires

Published:2018-04-09 Issue:15 Volume:112 Page:153104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Patra Atanu¹,Roy Anushree¹,Gomes Umesh Prasad²,Zannier Valentina²,Ercolani Daniele²,Sorba Lucia²

Affiliation:

1. Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, India

2. NEST-Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa, Italy

Funder

Department of Science and Technology, Government of West Bengal

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5021714

Reference19 articles.

1. Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

2. Electron Mobilities Approaching Bulk Limits in “Surface-Free” GaAs Nanowires

3. Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires

4. Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

5. Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core–Shell Nanowires

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