Moving photoluminescence bands in GaAs1−xSbxlayers grown by molecular beam epitaxy on InP substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357102
Reference25 articles.
1. Excitation‐dependent emission in Mg‐, Be‐, Cd‐, and Zn‐implanted GaAs
2. Quasi‐donor‐acceptor pair photoluminescence emission in GaxIn1−xAs/InP
3. Shifting photoluminescence bands in high-resistivity Li-compensated GaAs
4. Dependence of the Peak Energy of the Pair-Photoluminescence Band on Excitation Intensity
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