Chloride vapor phase epitaxial growth of high‐purity GaInP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96716
Reference20 articles.
1. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
2. Growth of In1-xGaxP Crystals from Solution
3. Room‐temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor deposition
4. Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures
5. Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength region
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ga-In-P (Gallium-Indium-Phosphorus);Non-Ferrous Metal Systems. Part 1;2006
2. Metalorganic chloride vapor phase epitaxial growth of III–V compounds in a single reactor;Journal of Crystal Growth;1993-09
3. Defects in organometallic vapor‐phase epitaxy‐grown GaInP layers;Applied Physics Letters;1991-08-19
4. Comparative study of atomic ordering and alloy clustering in InGaP crystals grown by metalorganic vapor phase epitaxy, chloride‐vapor phase epitaxy, and liquid phase epitaxy;Journal of Applied Physics;1990-10-15
5. Atomic ordering in InGaP crystals grown by chloride-VPE method;Journal of Crystal Growth;1990-01
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