Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98789
Reference10 articles.
1. CW electrooptical properties of InGaAsP(λ = 1.3 µm) buried-heterostructure lasers
2. InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current
3. V-grooved substrate buried heterostructure InGaAsP/InP laser emitting at 1.3 µm wavelength
4. High-power, low-threshold BH lasers operating at 1.52 μm grown entirely by MOVPE
5. 1.5 μm GaInAsP/InP buried heterostructure lasers fabricated by hybrid combination of liquid- and vapour-phase epitaxy
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1. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05
2. Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP;Journal of Crystal Growth;1998-12
3. Improved quality of AlxGa1−x as grown on se-Doped AlxGa1−x as substrate-Layers by metalorganic chemical vapor deposition;Journal of Electronic Materials;1996-07
4. The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substrates;Journal of Electronic Materials;1995-11
5. Lateral diffusion of sources during selective growth of Si‐doped GaAs layers by metalorganic vapor phase epitaxy;Journal of Applied Physics;1993-07-15
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