1.5 μm GaInAsP/InP buried heterostructure lasers fabricated by hybrid combination of liquid- and vapour-phase epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19820161?crawler=true&mimetype=application/pdf
Reference10 articles.
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Local Etch‐Rate Control of Masked InP / InGaAsP by Diffusion‐Limited Etching;Journal of The Electrochemical Society;1994-07-01
2. Preferential Etching of InGaAsP / InP Using Low Temperature Bromine/Methanol for Planar Buried Heterostructure Lasers;Journal of The Electrochemical Society;1989-06-01
3. Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition;Applied Physics Letters;1987-10-05
4. InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD;IEEE Journal of Quantum Electronics;1987-06
5. InGaAsP/InP planar buried heterostructure laser with semi-insulating InP current blocking layers grown by MOCVD;Topical Meeting on Semiconductor Lasers;1987
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