Insituinvestigation of amorphous silicon/silicon nitride interfaces by infrared ellipsometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109225
Reference19 articles.
1. Electronic states at the hydrogenated amorphous silicon/silcon nitride interface
2. Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors
3. Photoemission spectroscopy of ultrathin hydrogenated amorphous silicon layers
4. Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x‐ray photoelectron spectroscopy
5. Interface effects in amorphous silicon/nitride multilayers
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1. Polycrystalline Silicon/Dielectric/Substrate Material Systems for Thin Film Transistor Applications: The Impact of Material Properties on Transistors' Characteristics;physica status solidi (a);1999-12
2. Crystallization of a‐Si:H on Glass for Active Layers in Thin Film Transistors: Effects of Glass Coating;Journal of The Electrochemical Society;1999-01-01
3. Observation of Ellipsometric Oscillations when Depositing $\bf SiO_{\ninmbi{x}}$ Film on Si(100) Substrate Using an Electron Beam Deposition Method;Japanese Journal of Applied Physics;1997-06-15
4. Electronic Structural Properties of ?-C3N4, ?-Si3N4 and ?-Ge3N4;physica status solidi (b);1997-04
5. Real time observations of surface reactions during a-Si:H deposition or H2 plasma annealing by using FT-IR-ATR;Journal of Non-Crystalline Solids;1996-05
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