Oxide thickness dependence of high‐energy‐electron‐, VUV‐, and corona‐induced charge in MOS capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89093
Reference6 articles.
1. Mechanisms of Charge Buildup in MOS Insulators
2. Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator
3. Process Optimization of Radiation-Hardened CMOS Integrated Circuits
4. Vacuum Ultraviolet Radiation Effects in SiO2
5. Hole photocurrents and electron tunnel injection induced by trapped holes in SiO2 films
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