Oxide thickness dependence of high‐energy‐electron‐, VUV‐, and corona‐induced charge in MOS capacitors

Author:

Hughes G. W.,Powell R. J.,Woods M. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors;Applied Physics Letters;2017-02-13

2. Effect of radiation induced charging on gate-all-around NMOS devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-01

3. Noncontact interface trap determination of SiO2–4H–SiC structures;Journal of Applied Physics;2010-01

4. Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor;IEEE Transactions on Nuclear Science;2009-12

5. Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology;Chinese Physics;2007-12

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