Effect of radiation induced charging on gate-all-around NMOS devices-Reference-Cited by-同舟云学术

Effect of radiation induced charging on gate-all-around NMOS devices

Published:2016-01 Issue:1 Volume:34 Page:011803
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Kambour Kenneth E.¹,Kouhestani Camron²,Nguyen Duc D.³,Devine Roderick A. B.⁴

Affiliation:

1. Leidos, 2109 Airpark Rd. SE, Albuquerque, New Mexico 87106

2. TEAM Technologies, Inc., 1400 Eubank SE, Albuquerque, New Mexico 87123

3. COSMIAC, 2350 Alamo Ave. SE, Albuquerque, New Mexico 87106

4. Think Strategically, 12212 Morocco Rd. NE Albuquerque, New Mexico 87111

Funder

Air Force Research Laboratory (AFRL)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4939500

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation;Microelectronics Reliability;2023-11

2. Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors;Journal of Vacuum Science & Technology B;2021-05

3. Evolution of Ionization-Induced Defects in GLPNP Bipolar Transistors at Different Temperatures;IEEE Transactions on Nuclear Science;2020-09

4. Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors;Acta Physica Sinica;2018