High quality gate dielectric/MoS2 interfaces probed by the conductance method-Reference-Cited by-同舟云学术

High quality gate dielectric/MoS2 interfaces probed by the conductance method

Published:2018-06-04 Issue:23 Volume:112 Page:232101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dev Durjoy¹²^ORCID,Krishnaprasad Adithi¹³,Kalita Hirokjyoti¹³,Das Sonali¹,Rodriguez Victor¹⁴,Calderon Flores Jean¹⁵,Zhai Lei¹⁵,Roy Tania¹²³^ORCID

Affiliation:

1. NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, USA

2. Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, USA

3. Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, USA

4. Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, Florida 32816, USA

5. Department of Chemistry, University of Central Florida, Orlando, Florida 32816, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5028404

Reference27 articles.

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3. Field-Effect Transistors Built from All Two-Dimensional Material Components

4. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

5. Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures

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