Deep levels in InGaAsP/InPp+ndiodes grown by vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332039
Reference15 articles.
1. Recombination enhanced defect reactions
2. Performance of In<inf>x</inf>Ga<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf>photodiodes with dark current limited by diffusion, generation recombination, and tunneling
3. Dark current and breakdown characteristics of dislocation‐free InP photodiodes
4. Effect of heat treatment on n-type bulk grown and vapour phase epitaxial indium phosphide
5. Deep traps in ideal n-InP Schottky diodes
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Instability, softening and localization of deformation;Geological Society, London, Special Publications;1990
2. References;Thin Films by Chemical Vapour Deposition;1990
3. Sensitivity analysis of bulk traps detection in analog deep‐level transient spectroscopy measurement systems with exponentially weighted average;Review of Scientific Instruments;1989-01
4. A study of deep levels by transient spectroscopy onp‐type liquid‐phase‐epitaxial GaxIn1−xAsyP1−ygrown on semi‐insulating InP;Journal of Applied Physics;1986-03
5. Deep and shallow levels inn‐type indium phosphide irradiated with 200‐keV deuterons;Journal of Applied Physics;1984-05-15
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