Ferroelectric memory field-effect transistors using CVD monolayer MoS2 as resistive switching channel
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
2. Mitsubishi Electric Research Laboratories, Cambridge Massachusetts 02139, USA
Funder
the US Army Research Office through the Institute for Soldier Nanotechnologies at MIT
Center for Energy Efficient Electronics Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5129963
Reference33 articles.
1. In-memory computing with resistive switching devices
2. CVD Technology for 2-D Materials
3. Single-layer MoS2 transistors
4. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits
5. Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
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