Use of hydrogenation in the study of the properties of amorphous germanium tin alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342950
Reference15 articles.
1. Preparation of photoconductive a-SiGe alloy by glow discharge
2. Structural and optical properties of amorphous GexSn1-x alloys
3. Structure and composition of amorphous Ge1−xSnxthin films
4. Vibrational Spectra of Hydrogen in Silicon and Germanium
5. Use of hydrogenation in structural and electronic studies of gap states in amorphous germanium
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1. PECVD Processing of low bandgap-energy amorphous hydrogenated germanium-tin (a-GeSn:H) films for opto-electronic applications;Applied Materials Today;2022-06
2. Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn;Scientific Reports;2020-04-09
3. Growth of In-Plane Ge1–xSnx Nanowires with 22 at. % Sn Using a Solid–Liquid–Solid Mechanism;The Journal of Physical Chemistry C;2018-10-23
4. Parametrized dielectric functions of amorphous GeSn alloys;Journal of Applied Physics;2015-09-28
5. Optoelectronic and structural properties of a-Ge1−xCx:H prepared by rf reactive cosputtering;Journal of Applied Physics;1998-07
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