The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces
Author:
Affiliation:
1. Department of Physics, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Rd, Taipei 116, Taiwan
Funder
MOST
NSC
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4916303
Reference26 articles.
1. Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction
2. Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy
3. Initial stages of the growth of Fe on Si(111)7×7
4. Electron spectroscopy study of the Fe/Si(111) interface formation and reactivity upon annealing
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface;Scientific Reports;2019-06-20
2. Thermal evolution of Fe on Ge(1 1 1)–c(2 × 8) surface and the effect of (3×3)R30° Ag–Ge buffer layer;Applied Surface Science;2015-11
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