Accelerated and reproducible oxidation of strain-compensated short-period superlattice structures for incorporation in InP based devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1332104
Reference8 articles.
1. Lateral current spreading in ridge waveguide laser diodes
2. Very low threshold current 1.3μm InAsyP1−y/InP BH strained-layer quantum well laser diodes grown by MOCVD
3. Planar native‐oxide index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers
4. High‐performance planar native‐oxide buried‐mesa index‐guided AlGaAs‐GaAs quantum well heterostructure lasers
5. 1.3 [micro sign]m GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High efficiency planar MCLEDs;physica status solidi (b);2005-09
2. Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data;Semiconductor Science and Technology;2003-11-25
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