1.3 [micro sign]m GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer-Reference-Cited by-同舟云学术

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1.3 [micro sign]m GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer

Published:1998 Issue:14 Volume:34 Page:1427
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Iwai N.,Mukaihara T.,Itoh M.,Yamanaka N.,Arakawa S.,Shimizu H.,Kasukawa A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19981006?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Low threshold current 1.3 [micro sign]m InAsP QW ACIS lasers

2. Long wavelength (λ∼1.5 μm) native‐oxide‐defined InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes

3. Laterally oxidised InAlAs-oxide/InP distributed Bragg reflectors

4. Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications

5. Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 具有Cr阻挡层的GaAs欧姆接触工艺研究;Chinese Journal of Lasers;2022

2. Accelerated and reproducible oxidation of strain-compensated short-period superlattice structures for incorporation in InP based devices;Applied Physics Letters;2001-01

3. Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 [micro sign]m;Electronics Letters;2000

4. A Novel Selective Growth Process Using Oxidized InAlAs Mask for Fabricating Photonic Devices and Photonic Integrated Circuits;Japanese Journal of Applied Physics;1999-08-15

5. Low threshold, high reliability 1.3 [micro sign]m PACIS (p-substrate Al-oxide confined inner stripe) lasers and application to laser arrays;Electronics Letters;1999

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