Iodine‐doping effects on the vapor‐phase epitaxial growth of ZnSe on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345297
Reference12 articles.
1. Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy
2. Growth of ZnSxSe1−x by MBE on (100)GaAs substrates: Effect of lattice-matching
3. Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour deposition
4. Coherent Growth of ZnSe on GaAs by MOCVD
5. Growth of High-Quality ZnSe Layers in Hydrogen Plasma
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Orientation dependences of the growth rate and iodine incorporation for the ZnSe growth by hydrogen transport vapor phase epitaxy;Journal of Crystal Growth;1994-12
2. Influence of growth conditions on the structural, optical, and electrical properties of ZnSe films;Applied Physics A Solids and Surfaces;1992-05
3. Properties of polycrystalline ZnSe thin films grown by ion‐beam deposition;Journal of Applied Physics;1990-12
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