Orientation dependences of the growth rate and iodine incorporation for the ZnSe growth by hydrogen transport vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Coherent Growth of ZnSe on GaAs by MOCVD
2. Composition control by photo-irradiation in MOVPE of ZnCdSe and ZnCdS alloy layers and multi-layered structures
3. Structural properties of ZnSe films grown by migration enhanced epitaxy
4. Planar-Doping of Molecular Beam Epitaxy Grown ZnSe with Plasma-Excited Nitrogen
5. Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Vapor-phase epitaxial lateral overgrowth of ZnSe on GaAs;Journal of Crystal Growth;2000-04
2. ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells;Thin Solid Films;2000-02
3. Metalorganic chemical vapor deposition of ZnSe films on glass and GaAs(111) substrates;Journal of Crystal Growth;1998-07
4. Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation;Journal of Crystal Growth;1998-02
5. Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation;Journal of Crystal Growth;1998-02
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