Generation of divacancies in silicon irradiated by 2‐MeV electrons: Depth and dose dependence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339403
Reference18 articles.
1. Silicon Divacancy and its Direct Production by Electron Irradiation
2. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
3. Infrared Absorption and Photoconductivity in Irradiated Silicon
4. 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
5. Absorption measurements in neutron irradiated silicon
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