Bulk InAsSb with 0.1 eV bandgap on GaAs
Author:
Affiliation:
1. U.S. Army Research Laboratory, 2800 Powder Mill Rd., Adelphi, Maryland 20783, USA
2. Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794, USA
Funder
Army Research Office (ARO)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4993454
Reference34 articles.
1. High-Power 2.2-$\mu$m Diode Lasers With Metamorphic Arsenic-Free Heterostructures
2. 3 µm diode lasers grown on (Al)GaInSb compositionally graded metamorphic buffer layers
3. Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers
4. Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs 1-X Sb X alloys
5. Structural and luminescent properties of bulk InAsSb
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