Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers-Reference-Cited by-同舟云学术

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Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers

Published:2011-10-03 Issue:14 Volume:99 Page:141116
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Belenky G.,Donetsky D.,Kipshidze G.,Wang D.,Shterengas L.,Sarney W. L.,Svensson S. P.

Funder

Army Research Office

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3650473

Reference14 articles.

1. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy

2. Growth of InAs1−xSbx(0

3. Raman scattering in InAs1-xSbxalloys grown on GaAs by molecular beam epitaxy

4. Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1−xSbxgrown on (100) GaAs by molecular‐beam epitaxy

5. Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy

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