Electron spin resonance studies in β‐FeSi2crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362967
Reference10 articles.
1. A clarification of the index of refraction of beta‐iron disilicide
2. Impurity band inp-type β-FeSi2
3. The Hall effect in β‐FeSi2single crystals
4. Electronic structure of β-FeSi2
5. Defect-induced absorption-band-edge values in β-FeSi2
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1. Conduction mechanism analysis in β-FeSi2/n-Si heterojunction throughJ–V–Tmeasurement;Semiconductor Science and Technology;2008-08-14
2. Evaluation of bulk β-FeSi 2 crystal as a solar cell semiconductor through the photo-response measurements of Al/n-β-FeSi 2 Schottky diodes;Photonics for Solar Energy Systems II;2008-04-25
3. Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy;Journal of Applied Physics;2007-11-15
4. Carrier control of β-FeSi2 by 1.2 MeV-Au++ ion irradiation;Thin Solid Films;2007-08
5. Hole mobility of p-type β‐FeSi2 thin films grown from Si∕Fe multilayers;Journal of Applied Physics;2005-05
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