Dielectric degradation mechanism for copper interconnects capped with CoWP

Author:

Tan T. L.,Gan C. L.,Du A. Y.,Cheng C. K.,Gambino J. P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference17 articles.

1. K. Y. Yiang, W. J. Yoo, A. Krishnamoorthy, and L. J. Tang, Proceedings of the 43rd Annual International Reliability Physics Symposium (IEEE, Piscataway, NJ, 2005), p. 490.

2. Interlevel Dielectric Failures in Copper/Low-k Structures

3. T. Ko, C. L. Chang, S. W. Chou, M. W. Lin, C. J. Lin, C. H. Shih, H. W. Su, M. H. Tsai, W. S. Shue, and M. S. Liang, Symp. on VLSI Technol. Digest of Tech Papers (IEEE, Piscataway, NJ, 2003), p. 109.

4. L. G. Gosset, S. Chhun, A. Farcy, N. Casanova, V. Arnal, W. F. A. Besling, and J. Torres, Proceedings of the 42nd Annual International Reliability Physics Symposium (IEEE, Piscataway, NJ, 2004), p. 15.

5. Improved diffusion barriers for copper metallization obtained by passivation of grain boundaries in electroless deposited cobalt-based films

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3. Effect of Ta migration from sidewall barrier on leakage current in Cu/SiOCH low-k dielectrics;Journal of Applied Physics;2009-08-15

4. Improvement in the Oxidation Resistance of Cu Films by an Electroless Co-Alloy Capping Process;Journal of The Electrochemical Society;2009

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