Removing the current-limit of vertical organic field effect transistors
Author:
Affiliation:
1. Sara and Moshe Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
2. Department of Physics, Kent State University, Kent, Ohio 44242, USA
Funder
United States-Israel Binational Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5005800
Reference32 articles.
1. General observation of n-type field-effect behaviour in organic semiconductors
2. New Approaches to Nanofabrication: Molding, Printing, and Other Techniques
3. Fabrication of a vertical-type organic transistor with a planar metal base
4. Unique architecture and concept for high-performance organic transistors
5. Field-effect transistor versus analog transistor (static induction transistor)
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