Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H–SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121965
Reference20 articles.
1. Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
2. Doping of SiC by Implantation of Boron and Aluminum
3. EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes
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