Modulated photoconductivity study of electron drift mobility in amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372275
Reference13 articles.
1. Theory of trap-controlled transient photoconduction
2. Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating technique
3. Theory of the steady-state-photocarrier-grating technique for obtaining accurate diffusion-length measurements in amorphous silicon
4. Continuous decay of drift mobility in intrinsic a-Si:H and a-SiC:H upon light soaking investigated by the photomixing technique
5. The effect on recombination in amorphous semiconductors of transitions between localized states
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1. Nonequilibrium Occupancy of Dangling Bond Defects in Undoped Amorphous Silicon Studied by Subgap-Light-Induced Electron Spin Resonance;Japanese Journal of Applied Physics;2004-06-09
2. The modulated photocurrent technique: a powerful tool to investigate band gap states in silicon based thin films;physica status solidi (c);2004-03
3. Modulated photocurrents in a sandwich-cell structure: II. Influence of bias illumination intensity and carrier diffusion;Journal of Physics: Condensed Matter;2003-08-01
4. Photocarrier transport in undoped microcrystalline silicon studied by the modulated photocurrent technique;Journal of Applied Physics;2003
5. Density of states in the gap of amorphous semiconductors determined from modulated photocurrent measurements in the recombination regime;Journal of Applied Physics;2002-06
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