The effect on recombination in amorphous semiconductors of transitions between localized states
Author:
Affiliation:
1. a Department of Physics , Bar-Ilan University , Ramat-Gan , 52100 , Israel
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819008215251
Reference24 articles.
1. Abraham , M. 1988. Bar-Ilan University. M.Sc. Thesis
2. An extension of the multiple-trapping model for transient photocurrents in amorphous semiconductors
3. Hopping Conductivity in Disordered Systems
4. Bottger , B. and Bryskin , B. 1985. Hopping Conduction in Solids, 148Berlin: Akademie.
5. The theory and properties of randomly disordered crystals and related physical systems
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2. Tunneling-assisted thermalization and recombination of nonequilibrium carriers in localized states: Application to the frequency-resolved drift mobility in amorphous silicon;Physical Review B;2001-09-10
3. Frequency-resolved drift mobility in a-Si:H;Journal of Non-Crystalline Solids;2000-05
4. Modulated photoconductivity study of electron drift mobility in amorphous silicon;Journal of Applied Physics;2000-03-15
5. Photoconductivity in hydrogenated amorphous silicon. I. Thermal emission and hopping of trapped charges;Philosophical Magazine B;1993-06
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