Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Abstract

We report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al0.86Ga0.14N barrier/Al0.7Ga0.3N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 106) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3 V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.