Reduction of zinc diffusion into the collector of InP‐based double heterojunction bipolar transistors grown by organometallic chemical vapor deposition-Reference-Cited by-同舟云学术

Reduction of zinc diffusion into the collector of InP‐based double heterojunction bipolar transistors grown by organometallic chemical vapor deposition

Published:1994-07-18 Issue:3 Volume:65 Page:338-340
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bhat R.,Koza M. A.,Song J.‐I.,Schwarz S. A.,Caneau C.,Hong W.‐P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.112364

Reference9 articles.

1. Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPE

2. Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

3. Redistribution of Zn in GaAs‐AlGaAs heterojunction bipolar transistor structures

4. Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures

5. Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs‐GaAsnpnbipolar transistors

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