Mutual interference induced by single event effects in CMOS circuits
Author:
Affiliation:
1. State Key Laboratory of Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
2. Xidian University, Xi’an 710071, China
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0013051
Reference27 articles.
1. Measurement and Analysis of Interconnect Crosstalk Due to Single Events in a 90 nm CMOS Technology
2. Crosstalk Effects Caused by Single Event Hits in Deep Sub-Micron CMOS Technologies
3. Single-Event Cluster Multibit Upsets Due to Localized Latch-Up in a 90 nm COTS SRAM Containing SEL Mitigation Design
4. Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation
5. A Novel Feature of Neutron-Induced Multi-Cell Upsets in 130 and 180 nm SRAMs
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