Chemical structure of vanadium-based contact formation on n-AlN-Reference-Cited by-同舟云学术

Chemical structure of vanadium-based contact formation on n-AlN

Published:2010-07-15 Issue:2 Volume:108 Page:024906
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pookpanratana S.,France R.,Blum M.,Bell A.,Bär M.,Weinhardt L.,Zhang Y.,Hofmann T.,Fuchs O.,Yang W.,Denlinger J. D.,Mulcahy S.,Moustakas T. D.,Heske C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3456060

Reference28 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Nitride-based semiconductors for blue and green light-emitting devices

3. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

4. High-quality visible-blind AlGaN p-i-n photodiodes

5. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces

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