The gate tunable 2D pn junction driven out-of-equilibrium-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The gate tunable 2D pn junction driven out-of-equilibrium

Published:2021-11-07 Issue:17 Volume:130 Page:174505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chaves Ferney A.¹^ORCID,Jiménez David¹^ORCID

Affiliation:

1. Departament d’Enginyeria Electrònica, Escola d’Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, 08193 Bellaterra, Spain

Funder

EU's Horizon 2020 R&D Program

Ministerio de Economía, Industria y Competitividad, Gobierno de España

Ministerio de Ciencia, Innovación y Universidades

European Regional Development Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0063144

Reference59 articles.

1. The drive to miniaturization

2. Intrinsic MOSFET parameter fluctuations due to random dopant placement

3. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

4. Electrostatic Doping in Semiconductor Devices

5. Nanowire-based one-dimensional electronics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate Tunable Lateral 2D Pn Junctions: An Analytical Study of Its Electrostatics;IEEE Transactions on Nanotechnology;2023

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP