Deep photoluminescence in Si/Si1−xGex/Si quantum wells created by ion implantation and annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111647
Reference16 articles.
1. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys
2. Photoluminescence of Si1-xGex/Si Quantum Well Structures
3. Near band-edge photoluminescence from Si1−xGex/Si superlattices grown by molecular-beam epitaxy
4. Direct observation of band‐edge luminescence and alloy luminescence from ultrametastable silicon‐germanium alloy layers
5. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
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1. Tuning the luminescence emission of {105}-faceted Ge QDs superlattice using proton implantation and thermal annealing;Thin Solid Films;2008-11
2. Influence of the Si–Ge interface on phononless radiative recombination in Ge hut clusters grown on Si;Physica E: Low-dimensional Systems and Nanostructures;2002-03
3. Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures;Applied Physics Letters;2002-02-18
4. Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes;Materials Science and Engineering: B;2002-02
5. Photoluminescence lifetime and structure of molecular beam epitaxy porous Si1-xGex grown on Si;Journal of Porous Materials;2000
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