Field‐ion scanning tunneling microscopy study of the atomic structure of 6H–SiC(0001) surfaces cleaned byinsituSi molecular beam etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363037
Reference15 articles.
1. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
2. Step-Controlled Epitaxial Growth of SiC
3. Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
4. Growth mechanism of 6H‐SiC in step‐controlled epitaxy
5. Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {01\bar14} Substrates
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1. Giant ( 12×12 ) and ( 4×8 ) reconstructions of the 6H -SiC(0001) surface obtained by progressive enrichment in Si atoms;Physical Review B;2018-02-23
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