Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3068378
Reference21 articles.
1. Antimonide-based compound semiconductors for electronic devices: A review
2. Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs
3. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
4. Initial stages of the Pd-GaAs reaction: Formation and decomposition of ternary phases
5. Ohmic contacts to III–V compound semiconductors
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1. Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts;Journal of Applied Physics;2023-08-01
2. Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors;Microelectronic Engineering;2019-07
3. Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier;Coatings;2019-05-13
4. Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer;J INFRARED MILLIM W;2018
5. Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy;Semiconductors;2015-12
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