Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor-Reference-Cited by-同舟云学术

Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor

Published:2017-12-18 Issue:25 Volume:111 Page:252401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Sangyeop¹²^ORCID,Choi Seonghoon¹^ORCID,Bac Seul-Ki¹^ORCID,Jae Lee Kyung¹,Chang Jihoon¹,Choi Suho¹,Chongthanaphisut Phunvira¹,Lee Sanghoon¹,Liu Xinyu³,Dobrowolska M.³,Furdyna Jacek K.³

Affiliation:

1. Physics Department, Korea University, Seoul 136-701, South Korea

2. Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791, South Korea

3. Physics Department, University of Notre Dame, Notre Dame, Indiana 46556, USA

Funder

National Science Foundation

Korea University

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5012532

Reference28 articles.

1. Current-Induced Switching of Domains in Magnetic Multilayer Devices

2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

3. Current-induced magnetization reversal in magnetic nanowires

4. Spin transfer torques

5. Advances and Future Prospects of Spin-Transfer Torque Random Access Memory

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