Spin–orbit torque switching in a single (Ga,Mn)(As,P) layer with perpendicular magnetic anisotropy
Author:
Affiliation:
1. Physics Department, Korea University, Seoul 136-701, Republic of Korea
2. Physics Department, University of Notre Dame, Notre Dame, Indiana 46556, USA
Funder
National Research Foundation of Korea
Division of Materials Research
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0064236
Reference48 articles.
1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
3. Piezo-magnetoelectric effects inp-doped semiconductors
4. Evidence for reversible control of magnetization in a ferromagnetic material by means of spin–orbit magnetic field
5. Observation of the Spin Hall Effect in Semiconductors
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1. Anisotropy Dependent Spin-Orbit Torque Switching in Crystalline Ferromagnetic Semiconductor;IEEE Transactions on Magnetics;2024-09
2. Efficient Spin-Orbit Torque Magnetization Switching With Low Current Density in Crystalline Ferromagnetic Semiconductor;IEEE Transactions on Magnetics;2024-09
3. Magnetization switching by spin-orbit torque in crystalline (Ga,Mn)(As,P) film deposited on a vicinal GaAs substrate;Physical Review B;2024-08-12
4. Depolarization effects on spin-orbit torque magnetization switching in (Ga,Mn)(As,P) ferromagnetic semiconductor film;Applied Physics Letters;2024-07-08
5. Field-Free Spin–Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single Layer;ACS Applied Materials & Interfaces;2024-04-25
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