Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3681373
Reference22 articles.
1. Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating
2. High-field transport and terahertz generation in GaN
3. Disturbance of Phonon Distribution in High Electric Fields
4. Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels
5. Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields
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1. Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier;Scientific Reports;2016-11-23
2. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field;Applied Physics Letters;2014-12-15
3. Progress in Group III nitride semiconductor electronic devices;Journal of Semiconductors;2012-08
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