Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field-Reference-Cited by-同舟云学术

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Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

Published:2014-12-15 Issue:24 Volume:105 Page:242104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo Lei¹,Yang Xuelin¹^ORCID,Feng Zhihong²,Lv Yuanjie²,Cheng Jianpeng¹,Sang Ling¹,Xu Fujun¹,Tang Ning¹,Wang Xinqiang¹³,Ge Weikun⁴,Shen B.¹³

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

3. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

4. Department of Physics, Tsinghua University, Beijing 100084, China

Funder

Beijing Municipal Science and Technology Project

National Basic Research Program of China

National High-Tech Research and Development Program of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904418

Reference22 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. High-power AlGaN/GaN HEMTs for Ka-band applications

4. Hot-phonon-induced velocity saturation in GaN

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron transport in 2DEG AlGaN/GaN, AlGaN/AlN/GaN and 3D GaN channels under a strong electric field;Applied Physics A;2024-09-12

2. Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier;Scientific Reports;2016-11-23

3. Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels;Semiconductor Science and Technology;2015-09-01

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