Fabrication of graphene-like carbon films on 6H-SiC substrates via chlorination-annealing at low temperature-Reference-Cited by-同舟云学术

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Fabrication of graphene-like carbon films on 6H-SiC substrates via chlorination-annealing at low temperature

Published:2019-02 Issue:2 Volume:9 Page:025205
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Hu Yanfei¹²,Guo Lixin²^ORCID,Dou Wentao³,Chong Laiyuan¹,Guo Hui¹,Zhang Yuming¹

Affiliation:

1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an 710071, China

2. School of Physics and Optoelectronic Engineering, Institute of Electric Wave, Xidian University, Xi’an 710071, China

3. SICC Co., Ltd, Jinan 250018, China

Funder

National Natural Science Foundation of China

Chinese Universities Scientific Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5052520

Reference17 articles.

1. The rise of graphene

2. A detailed kinetic modeling study of aromatics formation in laminar premixed acetylene and ethylene flames

3. Synthesis of graphene on SiC substrate via Ni-silicidation reactions

4. Controllable gallium melt-assisted interfacial graphene growth on silicon carbide

5. Iron-mediated growth of epitaxial graphene on SiC and diamond

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