Iron-mediated growth of epitaxial graphene on SiC and diamond-Reference-Cited by-同舟云学术

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Iron-mediated growth of epitaxial graphene on SiC and diamond

Published:2012-11 Issue:14 Volume:50 Page:5099-5105
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Cooil S.P.,Song F.,Williams G.T.,Roberts O.R.,Langstaff D.P.,Jørgensen B.,Høydalsvik K.,Breiby D.W.,Wahlström E.,Evans D.A.,Wells J.W.

Funder

EPSRC

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference31 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. Electronic spin transport and spin precession in single graphene layers at room temperature;Tombros;Nature,2007

3. Bostwick A, Speck F, Seyller T, Horn K, Polini M, Asgari R, et al. Observation of plasmarons in quasi-freestanding doped graphene. Science 2010;328(5981):999–1002.

4. Band dispersion in the deep 1s core level of graphene;Lizzit;Nat Phys,2010

5. Observation of long spin-relaxation times in bilayer graphene at room temperature;Yang;Phys Rev Lett,2011

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