Asymptotic estimates of diffusion times for rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95603
Reference3 articles.
1. Exact description and data fitting of ion‐implanted dopant profile evolution during annealing
2. Thermal desorption of gases
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Further Time-Dependent Examples;Diffusion Phenomena;2001
2. Nonequilibrium point defects and diffusion in silicon;Materials Science and Engineering: R: Reports;1994-10-15
3. Transient Rapid Thermal Annealing of Low-Dose High-Energy Phosphorus Implanted Silicon;Japanese Journal of Applied Physics;1991-02-15
4. High-Energy Low-Dose Implanted Silicon Annealed by Transient RTA;MRS Proceedings;1990
5. The electrical and optical behaviour of lamp-annealed Si-implanted InP(Fe);Journal of Physics D: Applied Physics;1988-10-14
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