Magnetotransport in p-type Ge quantum well narrow wire arrays-Reference-Cited by-同舟云学术

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Magnetotransport in p-type Ge quantum well narrow wire arrays

Published:2015-04-27 Issue:17 Volume:106 Page:172102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Newton P. J.¹,Llandro J.¹,Mansell R.¹^ORCID,Holmes S. N.²,Morrison C.³,Foronda J.³,Myronov M.³,Leadley D. R.³^ORCID,Barnes C. H. W.¹

Affiliation:

1. Department of Physics, Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom

2. Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom

3. Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4919053

Reference34 articles.

1. Spin transport in germanium at room temperature

2. Electrical spin injection and transport in germanium

3. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

4. Electrical creation of spin accumulation in -type germanium

5. Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Activated and Metallic Conduction in p -Type Modulation-Doped Ge - Sn Devices;Physical Review Applied;2020-11-24

2. Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs(001) heterostructures;Journal of Applied Physics;2020-02-21

3. Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry;ACS Applied Electronic Materials;2019-11-11

4. Weak localization and weak antilocalization in doped germanium epilayers;Applied Physics Letters;2017-02-06

5. Spin-splitting in p-type Ge devices;Journal of Applied Physics;2016-08-28

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