Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography-Reference-Cited by-同舟云学术

Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

Published:2016-04 Issue:4 Volume:6 Page:045121
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kunimune Yorinobu,Shimada Yasuhiro,Sakurai Yusuke,Inoue Masao,Nishida Akio^ORCID,Han Bin^ORCID,Tu Yuan,Takamizawa Hisashi,Shimizu Yasuo^ORCID,Inoue Koji,Yano Fumiko,Nagai Yasuyoshi,Katayama Toshiharu,Ide Takashi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948558

Reference26 articles.

1. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices

2. On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress

3. Hydrogen migration under avalanche injection of electrons in Si metal‐oxide‐semiconductor capacitors

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