Dislocation etch pits in LPE‐grown Pb1−xSnxTe (LTT) heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326711
Reference22 articles.
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3. Growth and characterization of InGaAsP–InP lattice‐matched heterojunctions
4. A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrate
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Intrinsic infrared detectors;Progress in Quantum Electronics;1988-01
2. LPE growth of PbTeSe layers on nonplanar (100) and (110) oriented PbSnTe substrates;Journal of Crystal Growth;1986-08
3. Chapter 3 Semiconductor Lasers with Wavelengths Exceeding 2 μm;Semiconductors and Semimetals;1985
4. Lattice matching and thermal expansion in the PbSnTe system;Journal of Solid State Chemistry;1982-07
5. PbSnSeTe–PbSeTe Lattice-Matched Double-Heterostructure Lasers;Japanese Journal of Applied Physics;1982-01-05
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