Voltage‐controlled photoetching of GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92414
Reference15 articles.
1. A New Etching Solution System, H 3 PO 4 ‐ H 2 O 2 ‐ H 2 O , for GaAs and Its Kinetics
2. A Correlation Between Etch Characteristics of GaAs Etch Solutions Containing H 2 O 2 and Surface Film Characteristics
3. Electrolytic etching and electron mobility of GaAs for FET's
4. The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution
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1. Photodissolution of n-GaAs electrodes under laser illumination: control of the etching profile;Semiconductor Science and Technology;2001-03-14
2. Photoelectrochemical Etching of GaAs / AlGaAS Multilayer Structures;Journal of The Electrochemical Society;1993-09-01
3. Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-01
4. Factors controlling resolution in the laser‐induced aqueous etching of semiconductors using a focused cw beam;Applied Physics Letters;1991-10-07
5. Laser-Driven Etching;Thin Film Processes;1991
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